GFC044 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel Power MOSFET with extremely low RDS(on)

Gunter Semiconductor GmbH GFC044
N Channel Power MOSFET with extremely low RDS(on)
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Extremely low Rds(on)
Mechanical Data:
D19
Dimension 4.32mm x 4.57mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 20 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Static Drain-to - Source On-resistance
RDS(ON)
Continuous Drain current ( in target package) ID@25℃
Continuous Drain current ( in target package) ID@100℃
Operation Junction
Tj
Storage Temperature
TSTR
Limit
60
0.028
41
29
-55~175
-55~175
Unit Test Conditions
V VGS=0V, ID=250µΑ
Ω VGS=10V, ID=25Α
A
VGS=10V
A
VGS=10V
℃
℃
Target Device: IRFZ44
TO-263AB
Pd
Pd
2
83
W
W
@Ta=25℃
@Tc=25℃