GFC034 Datasheet, PDF (1/1 Pages) Gunter Seniconductor GmbH. – N Channel Power MOSFET with extremely low RDS(on)

Gunter Semiconductor GmbH GFC034
N Channel Power MOSFET with extremely low RDS(on)
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* extremely low RDS(ON)
Mechanical Data:
D12
Dimension 3.64mm x 3.86mm
Thickness:
400 µm
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire: 15 mil Al
Absolute Maximum Rating
@Ta=25℃
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
Symbol
Limit Unit
V(BR)DSS
60
V
RDS(ON) 0.05
Ω
ID@25℃
26
A
ID@100℃
18
A
Tj
-55~175 ℃
TSTR -55~175 ℃
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=16Α
VGS=10V
VGS=10V
Target Device: IRFZ34
TO-220AB
PD
56 W
@Tc=25℃