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GPTP1278 Datasheet, PDF (1/2 Pages) Green Power Solutions srl – PHASE CONTROLLED SCR
Green Power Solutions Srl
Web: www.gpsemi.it e-mail: info@gpsemi.it
Phone: +39-011-988 2251
Fax: +39-011-988 1358
http://gpsemi.it/pdf/GPTP1278.pdf
GPTP1278
PHASE CONTROLLED SCR
High reliability operation
Electroplating applications
Resistance welding applications
BLOCKING VOLTAGE UP TO
AVERAGE CURRENT
SURGE CURRENT
800 V
2780 A
38 kA
BLOCKING CHARACTERISTICS
Characteristic
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VDRM
Repetitive peak off-state voltage
IDRM
IRRM
Repetitive peak off-state current, max.
Repetitive peak reverse current, max.
Conditions
VDRM, single phase, half wave, Tj = Tjmax
VRRM, single phase, half wave, Tj = Tjmax
ON-STATE CHARACTERISTICS
IT(AV)
Average on-state current
IT(RMS)
R.M.S. on-state current
ITSM
Surge on-state current
I²t
I² t for fusing coordination
VT(TO)
rT
Threshold voltage
On-state slope resistance
VTM
Peak on-state voltage, max
IH
Holding current, max
IL
Latching current, typ
Sine wave,180° conduction, Th = 55 °C
Sine wave,180° conduction, Th = 55 °C
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
Tj = Tjmax
Tj = Tjmax
On-state current IT = 5000 A , Tj = Tjmax
Tj = 25 °C
Tj = 25 °C
TRIGGERING CHARACTERISTICS
VGT
Gate trigger voltage
IGT
Gate trigger current
VGD
Non-trigger voltage
PGM
Peak gate power dissipation
PG(AV)
Average gate power dissipation
IFGM
Peak gate current
VFGM
VRGM
Peak gate voltage (forward)
Peak gate voltage (reverse)
Tj = 25 °C, VD = 5 V
Tj = 25 °C, VD = 5 V
VD = 67% VRRM, Tj = Tjmax
Pulse width 100 µs
SWITCHING CHARACTERISTICS
di/dt
Critical rate of rise of on-state current
dV/dt
tq
Critical rate of rise of off-state voltage
Turn-off time, typ
Tj = Tjmax
Tj = Tjmax
Tj = Tjmax, IT = 1000 A, di/dt = -20 A/µs
VR = 50 V, VD = 67% VDRM, dV/dt = 20 V/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Thermal resistance (junction to case)
Double side cooled
Rth(c-h)
Thermal resistance (case to heatsink)
Double side cooled
Tjmax
Max operating junction temperature
Tstg
Storage temperature
F
Clamping force ± 5%
Mass
Value
800 V
900 V
800 V
100 mA
100 mA
2780 A
4367 A
38 kA
7220 kA²s
0.78 V
0.116 mW
1.36 V
300 mA
700 mA
3.5 V
300 mA
0.25 V
150 W
2W
10 A
10 V
12 V
200 A/µs
500 V/µs
µs
0.014
0.005
140
-40 / 140
23
500
°C/W
°C/W
°C
°C
kN
g
Document GPTP1278T002