SSFP9N20 Datasheet, PDF (2/2 Pages) GOOD-ARK Electronics – StarMOST Power MOSFET

SSFP9N20
StarMOS^T Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 200 —
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — 0.24
RDS(on)
Static Drain-to-Source On-resistance — －
VGS(th)
Gate Threshold Voltage
2.0 —
gfs
Forward Transconductance
3.8 －
——
IDSS
Drain-to-Source Leakage current
——
Gate-to-Source Forward leakage
——
IGSS
Gate-to-Source Reverse leakage
——
Qg
Total Gate Charge
—－
—
—
0.4
4.0
—
25
250
100
-100
43
V VGS=0V,ID=250μA
V/ْC Reference to 25ْC,ID=1mA
Ω VGS=10V,ID=5.4A
V VDS=VGS,ID=250μA
S VDS=50V,ID=5.4A
μA ^{VDS=200V,VGS=0V}
VDS=160V,VGS=0V,TJ=125ْC
VGS=20V
nA
VGS=-20V
ID=5.9A
Qgs
Gate-to-Source charge
— － 7.0 nC VDS=160V
Qgd
Gate-to-Drain("Miller") charge
— － 23
VGS=10V
td(on)
Turn-on Delay Time
— 9.4 －
VDD=100V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
— 28
— 39
— 20
－
ID=5.9A
－ ^{nS RG=12Ω}
－
RD=16Ω See Figure 10○⁴
LD
Internal Drain Inductance
— 4.5 —
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
－ 7.5 —
and center of
die contact
Ciss
Input Capacitance
— 800 —
VGS=0V
Coss
Output Capacitance
— 240 — pF VDS=25V
Crss
Reverse Transfer Capacitance
— 76 —
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS ^{Continuous Source Current .} —
(Body Diode)
Pulsed Source Current
ISM _{(Body Diode) â‘} 
._—
VSD Diode Forward Voltage
—
trr Reverse Recovery Time
－
Qrr Reverse Recovery Charge
－
—
9.0
—
36
—
2.0
170 340
1.1 2.2
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ=25ْC,IS=9.0A,VGS=0V ④
nS TJ=25ْC,IF=59A
nC ^{di/dt=100A/μs ④}
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating;pulse width limited by
max.junction temperature(see figure 11)
② L =4.6mH, IAS = 9.0A, VDD = 50V,
RG = 25Ω, Starting TJ = 25°C
③ ISD≤9.0A,di/dt≤120A/μS,VDD≤V(BR)DSS,
TJ≤150ْ C
④ Pulse width≤300μS; duty cycle≤2%
2