SSFP6N70 Datasheet, PDF (2/2 Pages) GOOD-ARK Electronics – StarMOST Power MOSFET

SSFP6N70
StarMOS^T Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 700 —
— V VGS=0V,ID=250μA
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — 0.78 — V/ْC Reference to 25ْC,ID=1mA
RDS(on)
Static Drain-to-Source On-resistance — 1.1 1.4 Ω VGS=10V,ID=3.25A ④
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V VDS=VGS,ID=250μA
gfs
Forward Transconductance
6.0 —
— S VDS=50V,ID=3.25A
IDSS
Drain-to-Source Leakage current
——
25 _μA VDS=700V,VGS=0V
— — 250
VDS=560V,VGS=0V,TJ=150ْC
Gate-to-Source Forward leakage
— — 100
VGS=20V
IGSS
Gate-to-Source Reverse leakage
nA
— — -100
VGS=-20V
Qg
Total Gate Charge
— — 38
ID=6.5A
Qgs
Gate-to-Source charge
— — 6.2 nC VDS=560V
Qgd
Gate-to-Drain("Miller") charge
— — 15
VGS=10V See Fig.6 and 13④
td(on)
Turn-on Delay Time
— 45 60
VDD=50V
tr
td(off)
Rise Time
Turn-Off Delay Time
— 130
— 170
—
ID=6.5A
— ^{nS RG=25Ω}
tf
Fall Time
— 71 —
LD
Internal Drain Inductance
— 4.5 —
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
— 7.5 —
and center of
die contact
Ciss
Input Capacitance
— 1075 —
VGS=0V
Coss
Output Capacitance
— 130 — pF VDS=25V
Crss
Reverse Transfer Capacitance
— 15 —
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS ^{Continuous Source Current .} —
(Body Diode)
Pulsed Source Current
ISM _{(Body Diode) â‘} 
VSD Diode Forward Voltage
trr Reverse Recovery Time
._—
—
—
Qrr Reverse Recovery Charge
—
—
6.5
—
28
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
—
1.4
V TJ=25ْC,IS=6.5A,VGS=0V ④
—
250
nS TJ=25ْC,IF=6.5A
3.5
nC ^{di/dt=100A/μs ④}
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating;pulse width limited by
max.junction temperature(see figure 11)
② L = 29mH, IAS = 6.5 A, VDD = 50V,
RG = 25Ω, Starting TJ = 25°C
③ ISD≤6.5A,di/dt≤200A/μS,VDD≤V(BR)DSS,
TJ≤25ْ C
④ Pulse width≤300μS; duty cycle≤2%
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