SSFP5N60 Datasheet, PDF (2/2 Pages) GOOD-ARK Electronics – StarMOST Power MOSFET

SSFP5N60
StarMOS^T Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 600 —
— V VGS=0V,ID=250μA
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — 0.6 — V/ْC Reference to 25ْC,ID=250μA
RDS(on)
Static Drain-to-Source On-resistance — 2.0 2.5 Ω VGS=10V,ID=2.25A ④
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V VDS=VGS,ID=250μA
gfs
Forward Transconductance
— 4.7 — S VDS=40V,ID=2.25A
IDSS
Drain-to-Source Leakage current
——
——
1 _μA VDS=600V,VGS=0V
10
VDS=480V,VGS=0V,TJ=150ْC
Gate-to-Source Forward leakage
— — 100
VGS=30V
IGSS
Gate-to-Source Reverse leakage
nA
— — -100
VGS=-30V
Qg
Total Gate Charge
— 15 19
ID=4.5A
Qgs
Gate-to-Source charge
— 2.5 — nC VDS=480V
Qgd
Gate-to-Drain("Miller") charge
— 6.6 —
VGS=10V
td(on)
Turn-on Delay Time
— 10 30
VDD=300V
tr
td(off)
Rise Time
Turn-Off Delay Time
— 42
— 38
90
ID=4.5A
85 ^{nS RG=25Ω}
tf
Fall Time
— 46 100
LD
Internal Drain Inductance
— 4.5 —
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
— 7.5 —
and center of
die contact
Ciss
Input Capacitance
— 515 670
VGS=0V
Coss
Output Capacitance
— 55 72 pF VDS=25V
Crss
Reverse Transfer Capacitance
— 6.5 8.5
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS ^{Continuous Source Current .} —
(Body Diode)
Pulsed Source Current
ISM _{(Body Diode) â‘} 
VSD Diode Forward Voltage
trr Reverse Recovery Time
._—
—
—
Qrr Reverse Recovery Charge
—
—
4.5
—
18
—
1.4
300 —
2.2
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ=25ْC,IS=4.5A,VGS=0V ④
nS TJ=25ْC,IF=4.5A
nC ^{di/dt=100A/μs ④}
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating;pulse width limited by
max.junction temperature(see figure 11)
② L = 18.9mH, IAS =4.5 A, VDD = 50V,
RG = 25 ∧, Starting TJ = 25°C
③ ISD≤4.5A,di/dt≤200A/μS,VDD≤V(BR)DSS,
TJ≤25ْ C
④ Pulse width≤300μS; duty cycle≤2%
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