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SSFP20N50 Datasheet, PDF (2/2 Pages) GOOD-ARK Electronics – StarMOST Power MOSFET | |||
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SSFP20N50
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 ÙC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 500 â
â V VGS=0V,ID=250μA
â³V(BR)DSS/â³TJ Breakdown Voltage Temp.Coefficient â 0.61 â V/ÙC Reference to 25ÙC,ID=1mA
RDS(on)
Static Drain-to-Source On-resistance â 0.21 0.25 Ω VGS=10V,ID=12A â£
VGS(th)
Gate Threshold Voltage
3.0 â 5.0 V VDS=VGS,ID=250μA
gfs
Forward Transconductance
11 â
â S VDS=50V,ID=12A
IDSS
Drain-to-Source Leakage current
ââ
50 μA VDS=500V,VGS=0V
â â 250
VDS=400V,VGS=0V,TJ=150ÙC
Gate-to-Source Forward leakage
â â 100
VGS=30V
IGSS
Gate-to-Source Reverse leakage
nA
â â -100
VGS=-30V
Qg
Total Gate Charge
â â 110
ID=20A
Qgs
Gate-to-Source charge
ââ
33 nC VDS=400V
Qgd
Gate-to-Drain("Miller") charge
â â 54
VGS=10V
td(on)
Turn-on Delay Time
â 22 â
VDD=250V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
â 74
â 45
â 33
â
ID=20A
â nS RG=7.5â¦
â
VGS =10V
LD
Internal Drain Inductance
â 4.5 â
Between lead,
6mm(0.25in.)
nH from package
LS
Internal Source Inductance
â 7.5 â
and center of
die contact
Ciss
Input Capacitance
â 2870 â
VGS=0V
Coss
Output Capacitance
â 320 â pF VDS=25V
Crss
Reverse Transfer Capacitance
â 34.0 â
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current . â
(Body Diode)
Pulsed Source Current
ISM (Body Diode) â
.â
VSD Diode Forward Voltage
â
trr Reverse Recovery Time
â
Qrr Reverse Recovery Charge
â
â
20
â
80
â
1.5
520 780
5.3 8.0
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ=25ÙC,IS=20A,VGS=0V â£
nS TJ=25ÙC,IF=20A
nC di/dt=100A/μs â£
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
â Repetitive rating;pulse width limited by
max.junction temperature
â¡ L = 1.6mH, IAS = 20 A, RG = 25â¦,
Starting TJ = 25°C
⢠ISDâ¤20A,di/dtâ¤350A/μS,VDDâ¤V(BR)DSS,
TJâ¤25Ù C
⣠Pulse widthâ¤300μS; duty cycleâ¤2%
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