SSF7609 Datasheet, PDF (2/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

SSF7609
75V N-Channel MOSFET
Thermal Resistance
Symbol
RθJC
RθJA
Characteristics
Junction-to-case ③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
0.75
62
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics @T_A=25℃ unless otherwise specified
Symbol Parameter
Min.
V(BR)DSS Drain-to-Source breakdown voltage 75
—
RDS(on) Static Drain-to-Source on-resistance
—
2
VGS(th) Gate threshold voltage
—
—
IDSS
Drain-to-Source leakage current
—
—
IGSS
Gate-to-Source forward leakage
—
Qg
Total gate charge
—
Qgs
Gate-to-Source charge
—
Qgd
Gate-to-Drain("Miller") charge
—
td(on)
Turn-on delay time
—
tr
Rise time
—
td(off)
Turn-Off delay time
—
tf
Fall time
—
Ciss
Input capacitance
—
Coss
Output capacitance
—
Crss
Reverse transfer capacitance
—
Typ.
—
7.3
14.5
—
2.56
—
—
—
—
93
36
29
19
17
88
31
6305
340
208
Max.
—
9
—
4
—
1
50
100
-100
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 75V,VGS = 0V
TJ = 125℃
VGS =20V
VGS = -20V
ID = 30A,
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
RL=15Ω,
RGEN=2.5Ω
VGS = 0V
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max.
—
— 80 ①
—
—
320
—
0.88 1.3
—
45
—
—
101
—
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=30A, VGS=0V
TJ = 25°C, IF =75A, di/dt =
100A/μs
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Rev.1.0