SSF6908 Datasheet, PDF (2/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

SSF6908
68V N-Channel MOSFET
Thermal Resistance
Symbol
RθJC
RθJA
Characteristics
Junction-to-case ③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
0.83
62
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics @T_A=25℃ unless otherwise specified
Symbol Parameter
V(BR)DSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Total gate charge
Qgs
Gate-to-Source charge
Qgd
Gate-to-Drain("Miller") charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-Off delay time
tf
Fall time
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Min.
68
—
—
2
—
—
—
—
-100
—
—
—
—
—
—
—
—
—
—
Typ.
—
6.8
12.7
—
2.5
—
—
—
—
93.8
28.5
26.9
20.4
94.2
47.3
86.5
6193
308
253
Max.
—
8
—
4
—
1
50
100
—
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 68V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 30A,
VDS=30V,
VGS = 10V
VGS=10V, VDS =60V,
RL=1.0Ω,
RGEN=2.55Ω，
ID = 60A
VGS = 0V,
VDS = 25V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
—
—
—
—
Typ.
—
—
0.82
43.1
86.5
Max.
84 ①
336
1.3
—
—
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=10A, VGS=0V
TJ = 25°C, IF =68A, di/dt =
100A/μs
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Page 2 of 7
Rev.1.0