SSF5NS70UG_15 Datasheet, PDF (2/7 Pages) GOOD-ARK Electronics – 700V N-Channel MOSFET

SSF5NS70UG
700V N-Channel MOSFET
Thermal Resistance
Symbol
RθJC
RθJA
Characteristics
Junction-to-case ③
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
—
Max.
4.4
62
Units
℃/W
℃/W
Electrical Characteristics @T_A=25℃ unless otherwise specified
Symbol Parameter
Min.
V(BR)DSS Drain-to-Source breakdown voltage 700
—
—
RDS(on) Static Drain-to-Source on-resistance
—
—
2
VGS(th) Gate threshold voltage
—
—
IDSS
Drain-to-Source leakage current
—
—
IGSS
Gate-to-Source forward leakage
—
Qg
Total gate charge
—
Qgs
Gate-to-Source charge
—
Qgd
Gate-to-Drain("Miller") charge
—
td(on)
Turn-on delay time
—
tr
Rise time
—
td(off)
Turn-Off delay time
—
tf
Fall time
—
Ciss
Input capacitance
—
Coss
Output capacitance
—
Crss
Reverse transfer capacitance
—
Typ.
—
1.1
2.3
1.25
2.6
—
2.1
—
—
—
—
9.7
1.9
2.3
8.7
5.5
22
13
344
17
2.7
Max.
—
1.25
—
1.4
—
4
—
1
50
100
-100
—
—
—
—
—
—
—
—
—
—
Units
V
Ω
Ω
V
μA
nA
nC
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
VGS=10V,ID = 2.8A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =700V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 5A,
VDS=200V,
VGS = 10V
VGS=10V, VDS =400V,
ns
RGEN=10.2Ω,ID =1.5A
VGS = 0V
pF
VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
5①
—
—
15
—
0.79 1.2
—
92
—
—
410
—
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.8A, VGS=0V
TJ = 25°C, IF = 1.5A,
di/dt = 100A/μs
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Page 2 of 7
Rev.1.0