SSF5508 Datasheet, PDF (2/7 Pages) Silikron Semiconductor Co.,LTD. – Power switching application

SSF5508
55V N-Channel MOSFET
Thermal Resistance
Symbol
RθJC
RθJA
Characteristics
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
0.73
62
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics @T_A=25℃ unless otherwise specified
Symbol Parameter
Min.
V(BR)DSS Drain-to-Source breakdown voltage 55
—
RDS(on) Static Drain-to-Source on-resistance
—
2.5
VGS(th) Gate threshold voltage
—
—
IDSS
Drain-to-Source leakage current
—
IGSS
Gate-to-Source forward leakage
—
-100
Qg
Total gate charge
—
Qgs
Gate-to-Source charge
—
Qgd
Gate-to-Drain("Miller") charge
—
td(on)
Turn-on delay time
—
tr
Rise time
—
td(off)
Turn-Off delay time
—
tf
Fall time
—
Ciss
Input capacitance
—
Coss
Output capacitance
—
Crss
Reverse transfer capacitance
—
Typ.
—
4.5
7
—
2.4
—
—
—
—
124.7
24.46
48.68
19.62
18.82
69.76
30.12
5607
463
454
Max.
—
5.5
—
3.5
—
1
50
100
—
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 68A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 55V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 30A,
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
RL=15Ω,
RGEN=2.55Ω
VGS = 0V
VDS = 25V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max.
—
—
110
—
—
440
—
0.94 1.3
—
37
—
—
60
—
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=68A, VGS=0V
TJ = 25°C, IF =68A, di/dt =
100A/μs
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Page 2 of 7
Rev.4.2