SSF3606_15 Datasheet, PDF (2/6 Pages) GOOD-ARK Electronics – 30V N-Channel MOSFET

SSF3606
30V N-Channel MOSFET
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IG SS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(O N)
gFS
VDS=VGS,ID=250μA
1.3 1.7
2.5
V
VGS=4.5V, ID=11.5A
6.4
8.5
mΩ
VGS=10V, ID=15A
4.8
6
mΩ
VDS=5V,ID=11A
25
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
3100
PF
Coss
VDS=15V,VGS=0V,
F=1.0MHz
550
PF
Crss
300
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
19
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
VDS=15V,VGS=10V,RGEN=6Ω
11
nS
td(off)
ID=1A
60
nS
Turn-Off Fall Time
tf
25
nS
Total Gate Charge
Qg
50
nC
Gate-Source Charge
Qgs
VDS=15V,ID=15A,VGS=10V
8
nC
Gate-Drain Charge
Qgd
15
nC
Body Diode Reverse Recovery Time
Trr
20
nS
IF=15A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=2.8A
0.75 1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in² FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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