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GDSSF8421_15 Datasheet, PDF (2/4 Pages) GOOD-ARK Electronics – GENERAL FEATURES
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GDSSF8421
Drain-Source Breakdown Voltage BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
VGS=0V ID=250μA
VGS=0V ID=-250μA
VDS=20V,VGS=0V
VDS=-20V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
VDS=VGS,ID=-250μA
VGS=4.5V, ID=4.5A
VGS=-4.5V, ID=-3.5A
VGS=2.5V, ID=3.9A
VGS=-2.5V, ID=-2.7A
VDS=10V,ID=4.5A
VDS=-10V,ID=-3.5A
N-Ch 20
P-Ch -20
N-Ch
P-Ch
N-Ch
P-Ch
V
1
μA
-1
±100
nA
±100
N-Ch 0.6
V
P-Ch -0.6
N-Ch
23 30
P-Ch
N-Ch
40 50
mΩ
30 40
P-Ch
60 85
N-Ch
20
S
P-Ch
10
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
N-Ch
VDD=10 V,ID=1A
VGEN=10V,RGEN=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
td(off)
P-Ch
VDD=-10V,ID=-1A
P-Ch
VGEN=-10V,RGEN=6Ω
N-Ch
tf
P-Ch
N-Ch
Qg
N-Ch
P-Ch
VDS=15V,ID=4.5A,VGS=4.5V
N-Ch
Qgs
P-Ch
P-Ch
N-Ch
Qgd VDS=-15V,ID=-4.5A,VGS=-3.5V
P-Ch
22 50
nS
27 50
40 80
nS
30 60
50 100
nS
55 100
20 40
nS
21 40
10 20
nC
14 25
2.5
nC
3.5
3.0
nC
3.5
Suzhou Goodark Electronics Co., Ltd
Version 1.0
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