GDSSF3611E Datasheet, PDF (2/5 Pages) GOOD-ARK Electronics – Advanced trench MOSFET process technology

GDSSF3611E
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol Parameter
Min.
V(BR)DSS Drain-to-Source breakdown voltage -30
—
RDS(on) Static Drain-to-Source on-resistance
—
VGS(th) Gate threshold voltage
1
IDSS
Drain-to-Source leakage current
—
—
IGSS
Gate-to-Source forward leakage
—
Qg
Total gate charge
—
Qgs
Gate-to-Source charge
—
Qgd
Gate-to-Drain("Miller") charge
—
td(on)
Turn-on delay time
—
tr
Rise time
—
td(off)
Turn-Off delay time
—
tf
Fall time
—
Ciss
Input capacitance
—
Coss
Output capacitance
—
Crss
Reverse transfer capacitance
—
Typ.
—
10.6
14.1
—
—
—
—
55
3.5
18
8.0
5.8
56
38
3224
459
425
Max.
—
13
16
2
-1
10
-10
—
—
—
—
—
—
—
—
—
—
Units
V
mΩ
V
μA
μA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS =-10.0V, ID =-10.0A
VGS =-4.50V, ID =-7.50A
VDS = VGS, ID = 250μA
VDS = -30V,VGS = 0V
VGS = 20V
VGS = -20V
ID = -10A,
VDS=-25V,
VGS = -10V
VGS=-10V, VDS=-15V,
RL=15Ω,
RGEN=3Ω
VGS = 0V
VDS = -15V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
-12
—
—
-48
—
-0.73 -1.2
—
16
—
—
5.9
—
Units
A
A
V
ns
uC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=-2.1A, VGS=0V
TJ = 25°C, IF =-10A, di/dt =
100A/μs
Suzhou Goodark Electronics Co., Ltd
Version 1.0