GDSSF2314_15 Datasheet, PDF (2/4 Pages) GOOD-ARK Electronics – GENERAL FEATURES

GDSSF2314
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
ON CHARACTERISTICS (Note 3)
Min Typ Max
20
1
±100
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
Forward Transconductance
gFS
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VDS=VGS,ID=250μA
VGS=2.5V, ID=4.5A
VGS=4.5V, ID=5A
VDS=10V,ID=5A
0.5 0.65 1.2
33
40
27
33
10
500
VDS=8V,VGS=0V,
300
F=1.0MHz
140
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
VDS=10V,ID=5A,VGS=4.5V
20
40
18
40
60
108
28
56
10
15
2.3
2.9
VGS=0V,IS=1A
1.2
1
Unit
V
μA
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
Version 1.0