GDSSF2301A Datasheet, PDF (2/4 Pages) GOOD-ARK Electronics – High Power and current handing capability

GDSSF2301A
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
Min Typ Max Unit
-20
V
-1
μA
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
-0.5
-1
V
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-3A
46
65
mΩ
65
80
VDS=-5V,ID=-4A
7
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
640
PF
Coss
VDS=-10V,VGS=0V,
F=1.0MHz
180
PF
Crss
100
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
27
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
VDD=-10V,ID=-1A
60
nS
td(off)
VGS=-4.5V,RGEN=6Ω
30
nS
tf
10
nS
Total Gate Charge
Qg
9.6
nC
Gate-Source Charge
Qgs
VDS=-10V,ID=-4A,VGS=-4.5V
1.5
nC
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
2.4
nC
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
Version 1.0