GDSSF22A5E_15 Datasheet, PDF (2/5 Pages) GOOD-ARK Electronics – Main Product Characteristics

GDSSF22A5E
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol
BVDSS
Parameter
Drain-to-Source breakdown
voltage
Min.
20
Typ.
—
Max.
—
Units
V
Static Drain-to-Source
—
1.5
3.0
RDS(on)
Ω
on-resistance
—
2.2
3.5
VGS(th) Gate threshold voltage
0.5
1.0
1.5
IDSS
IGSS
gFS
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source leakage
current
Gate-to-Source forward
leakage
Gate-to-Source reverse
leakage
Forward Transconductance
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
—
—
-100
—
—
—
—
—
—
—
—
—
1.0
—
100
—
—
50
—
13
—
15
—
98
—
60
—
11.5 20
10
15
3.5 6.0
Source-Drain Ratings and Characteristics
Symbol
VSD
Parameter
Diode Forward Voltage
Min.
—
Typ.
0.66
Max.
0.8
V
μA
μA
mS
ns
pF
Units
V
Conditions
VGS = 0V,
ID = 100μA
VGS = 4.5V, ID = 10mA
VGS = 2.5V, ID = 10mA
VDS = 3V,
ID = 100μA
VDS = 20V,
VGS = 0V
VGS =10V
VGS = -10V
ID = 10mA,VDS=3V
VGS=4.5V, VDS=5V,
ID=10mA, RG=10Ω
VGS = 0V,
VDS =5V,
ƒ = 1.0MHz
Conditions
IS=10mA, VGS=0V
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of R_θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
Suzhou Goodark Electronics Co., Ltd
Version 1.0