BAS86_15 Datasheet, PDF(2/2 Page) NXP Semiconductors

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BAS86_15 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier single diode

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Electrical Characteristics

(TJ=25oC unless otherwise noted.)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Reverse breakdown voltage

Leakage current

Forward voltage

Capacitance

Reverse recovery time

V(BR)R

Ctot

trr

IR=10uA (pulsed)

VR=25V

Pulse Test tp<300us, Î´<2%

IF=0.1mA

IF=1mA

I =10mA

IF=30mA

IF=100mA

VR=1V, f=1MHz

IF=10mA, IR=10mA,

I =1mA

Volts

0.2

0.5

0.200 0.300

0.275

0.365

0.380

0.450

Volt

0.460 0.600

0.700 0.900

700