SSPL2015 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced Process Technology

Main Product Characteristics
V_DSS
200V
R_DS(on) 0.13ohm(typ.)
I_D
18A ①
Features and Benefits
TO - 220
 Advanced Process Technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature
 Lead free product
SSPL2015
200V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using our
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=4.2mH
Avalanche Current @ L=4.2mH
Operating Junction and Storage Temperature Range
Max.
18 ①
13 ①
72
150
1.0
200
± 30
412
14
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
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