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SSFP4N25 Datasheet, PDF (1/2 Pages) GOOD-ARK Electronics – StarMOST Power MOSFET | |||
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SSFP4N25
StarMOST Power MOSFET
â Extremely high dv/dt capability
â Low Gate Charge Qg results in
Simple Drive Requirement
â 100% avalanche tested
â Gate charge minimized
â Very low intrinsic capacitances
â Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage
NâChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
with planar stripe DMOS technology.
Application
â Switching application
VDSS = 250V
ID25 = 4.1A
RDS(ON) = 1.1Ω
Pin1âGate
Pin2âDrain
Pin1âSource
Absolute Maximum Ratings
Parameter
ID@Tc=25Ù C Continuous Drain Current,VGS@10V
ID@Tc=100ÙC Continuous Drain Current,VGS@10V
IDM
Pulsed Drain Current â
PD@TC=25ÙC Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy â¡
IAR
Avalanche Current â
EAR
Repetitive Avalanche Energy â
dv/dt
Peak Diode Recovery dv/dt â¢
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
4.1
2.6
16
49
0.39
±30
84
4.1
4.9
4.8
â55 to +150
300(1.6mm from case)
10 Ibfâin(1.1Nâm)
Units
A
W
W/Ù C
V
mJ
A
mJ
V/ns
ÙC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
â
â
2.54
RθCS
Case-to-Sink,Flat,Greased Surface
â
0.50
â
RθJA
Junction-to-Ambient
â
â
62.5
Units
ÙC/W
1
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