SSFP10N10 Datasheet, PDF (1/2 Pages) GOOD-ARK Electronics – StarMOST Power MOSFET

SSFP10N10
StarMOS^T Power MOSFET
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in
Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout
with planar stripe DMOS technology.
Application
■ Switching application
VDSS = 100V
ID25 = 9.2A
RDS(ON) = 0.2Ω
Pin1–Gate
Pin2–Drain
Pin1–Source
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous Drain Current,VGS@10V
ID@Tc=100ْC Continuous Drain Current,VGS@10V
IDM
Pulsed Drain Current ①
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ②
IAR
Avalanche Current ①
EAR
Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max.
9.2
6.5
37
45
0.3
±20
113
9.2
4.5
6.5
–55 to +175
300(1.6mm from case)
10 Ibf●in(1.1N●m)
Units
A
W
W/ْ C
V
mJ
A
mJ
V/ns
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
3.31
RθCS
Case-to-Sink,Flat,Greased Surface
—
0.50
—
RθJA
Junction-to-Ambient
—
—
62.5
Units
ْC/W
1