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SSFN3313 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability | |||
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DESCRIPTION
The SSFN3313 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
â VDS =-30V,ID =-8A
RDS(ON) < 25mΩ @ VGS=-4.5V
RDS(ON) < 14mΩ @ VGS=-10V
â High Power and current handing capability
â Lead free product
â Surface Mount Package
SSFN3313
30V P-Channel MOSFET
D
G
S
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
âPWM applications
âLoad switch
âPower management
DFN3Ã3-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSFN3313
SSFN3313
DFN3x3-8L
-
Tape Width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25â)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70â)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±25
-8
-6
-45
3.1
-55 To 150
Unit
V
V
A
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
â/W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
Min Typ Max Unit
-30
V
-1
μA
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Page 1 of 4
Rev.1.0
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