SSFN2269 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

DESCRIPTION
The SSFN2269 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = -20V,ID =-3.3A
RDS(ON) < 90mΩ @ VGS=-4.5V
RDS(ON) < 120mΩ @ VGS=-2.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
SSFN2269
20V Dual P-Channel MOSFET
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
DFN2X2-6L
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSFN2269
SSFN2269
DFN2X2-6L
－
Tape Width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±8
-3.3
-20
1.5
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
℃ /W
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