SSFM3008H1 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics
V_DSS
30V
R_DS(on) 7.4mohm(typ.)
I_D
20A
SOP-8
Features and Benefits
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature
 Lead free product
SSFM3008H1
30V N-Channel MOSFET
SSFM3008H1
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
20
16
136
3.1
30
± 20
100
44
-55 to + 175
Units
A
W
V
V
mJ
A
°C
Symbol
RθJC
RθJA
Characteristics
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
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Typ.
—
—
—
Max.
22
35
65
Units
℃/W
℃/W
℃/W
Rev.1.0