SSFM2506L Datasheet, PDF (1/7 Pages) GOOD-ARK Electronics – 25V N-Channel MOSFET

Main Product Characteristics:
SSFM2506L
25V N-Channel MOSFET
V_DSS
R_DS(on)
25V
6mohm
SSSSSSFFFMMM222555000866L
I_D
60A
Features and Benefits:
TO-252 DPAK ^{Marking and pin}
ass ignm e nt
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature
 Lead free product
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on resistance, fast switching speed and short reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in PWM, load switching
and a wide variety of other applications
Absolute Max Rating:
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V①
IDM
Pulsed Drain Current②
ISM
Pulsed Source Current (Body Diode)②
PD @TC = 25°C Power Dissipation③
PD @TC =100°C Power Dissipation③
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy @ L=0.1mH②
IAR
Avalanche Current @ L=0.1mH②
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
60
50
130
130
50
25
25
± 20
90
42
-55 to + 175
Units
A
W
W
V
V
mJ
A
°C
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Value
2.8
15
41
Unit
℃/W
℃/W
℃/W
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