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| SSFD4024 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology | |||
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Main Product Characteristics
SSFD4024
40V N-Channel MOSFET
VDSS
40V
RDS(on)
30 mohm
ID
12A
Features and Benefits
ï® Advanced trench MOSFET process technology
ï® Special designed for Convertors and power controls
ï® Ultra low on-resistance
ï® 175â operating temperature
ï® Lead free product
TO-252 Top View
SSFD4024
Marking and Pin Assignment
Description
It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in automotive applications and a wide variety of other applications.
Absolute Max Rating
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Currentâ
PD @TC = 25°C Power Dissipation
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energyâ¡
IAR
Avalanche Current @ L=0.3mH
TJ TSTG
Operating Junction and Storage Temperature Range
Max.
12
12
30
20
± 20
22
10
-55 to + 175
Units
A
W
V
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient
Junction-to-Ambient (PCB mounted, steady-state)
www.goodark.com
Page 1 of 4
Value
7.5
30
60
Unit
â/W
â/W
â/W
Rev.1.0
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