SSFD3006 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics
V_DSS
30V
R_DS(on) 3.8mΩ (typ.)
I_D
90A
TO-252 (D-PAK)
Features and Benefits
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 High Power and current handing capability
 175℃ operating temperature
 Lead free product
SSFD3006
30V N-Channel MOSFET
S^SS^SF^FD³⁶3¹0²0^D6
Marking and Pin Schematic Diagram
Assignment
Description
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate
charge. These features combine to make this design an extremely efficient and reliable device for use in PWM,
load switching and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
ISM
PD @TC = 25°C
PD @TC =100°C
VDS
VGS
dv/dt
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Pulsed Source Current (Body Diode)②
Power Dissipation③
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Peak diode recovery voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
90
66
360
360
75
78
30
± 20
1.5
90
42
-55 to + 175
Units
A
W
W
V
V
V/nS
mJ
A
°C
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