SSFD3004 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

DESCRIPTION
The SSFD3004 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
● VDS = 30V,ID =55A
RDS(ON) < 9.5mΩ @ VGS=4.5V
RDS(ON) < 5.5mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
SSFD3004
30V N-Channel MOSFET
D
G
S
Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSFD3004
SSFD3004
TO-252E-2-M
-
TO-252E-2-M Top View
Tape Width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Avalanche Current@L=0.3mH
IAR
Single Pulse Avalanche Energy(NOTE 5)
EAS
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
55
46
100
60
500
50
-55 To 150
Unit
V
V
A
A
A
A
mJ
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
41
℃/W
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Rev.2.0