SSF8822 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

SSF8822
20V Dual N-Channel MOSFET
DESCRIPTION
The SSF8822 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 0.8V. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 21mΩ @ VGS=10V
RDS(ON) < 24mΩ @ VGS=4.5V
RDS(ON) < 28mΩ @ VGS=3.6V
RDS(ON) < 32mΩ @ VGS=2.5V
RDS(ON) < 50mΩ @ VGS=1.8V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
D1
D2
G1
G2
S1
S2
Marking and pin Assignment
Schematic Diagram
TSSOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF8822
SSF8822
TSSOP-8
Ø330mm
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
30
1.5
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=16V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
Min Typ Max Unit
20
V
1
μA
±100
nA
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