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| SSF8205U Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology | |||
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Main Product Characteristics
VDSS
18V
RDS(on) 20mohm(typ.)
ID
4.5A
SOT23-6
Features and Benefits
ï® Advanced trench MOSFET process technology
ï® Special designed for buttery protection, load
switching and general power management
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 150â operating temperature
ï® Lead free product
SSF8205U
18V Dual N-Channel MOSFET
D1
D2
G1
G2
S1
S2
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications.
Absolute Max Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
18
±10
4.5
25
1.25
-55 To 150
Unit
V
V
A
A
W
â
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
â /W
www.goodark.com
Page 1 of 8
Rev.1.0
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