SSF7NS65UF_15 Datasheet, PDF (1/7 Pages) GOOD-ARK Electronics – 650V N-Channel MOSFET

Main Product Characteristics
V_DSS
650V
R_DS(on)
I_D
0.6Ω (typ.)
7A ①
TO-220F
Features and Benefits
 High dv/dt and avalanche capabilities
 100% avalanche tested
 Low input capacitance and gate charge
 Low gate input resistance
 Lead free product
SSF7NS65UF
650V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF7NS65UF series MOSFET is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low R_DS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
7①
5①
28
33
0.264
650
± 30
98
1.4
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
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