SSF7NS65G Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – High dv/dt and avalanche capabilities

Main Product Characteristics
V_DSS
650V
R_DS(on) 0.58Ω (typ.)
I_D
7A ①
Features and Benefits
 High dv/dt and avalanche capabilities
 100% avalanche tested
 Low input capacitance and gate charge
 Low gate input resistance
 Lead free product
TO-251
SSF7NS65G
650V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF7NS65G series MOSFET is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low R_DS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=15.2mH
Avalanche Current @ L=15.2mH
Operating Junction and Storage Temperature Range
Max.
7①
5①
28
83
0.67
650
± 30
68
3
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
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