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SSF7504 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology | |||
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SSF7504
75V N-Channel MOSFET
FEATURES
ï® Advanced trench process technology
ï® Special designed for Convertors and power controls
ï® High density cell design for ultra low RDS(ON)
ï® Fully characterized Avalanche voltage and current
ï® Avalanche Energy 100% test
ï® Lead free product
DESCRIPTION
The SSF7504 is a new generation of middle voltage and
high current NâChannel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical RDS(ON) can reduce
to 2.7mohm.
APPLICATIONS
ï® Power switching application
ID=220A
BV=75V
RDS(ON)=2.7mΩ (typ.)
SSF7504 Top View (TO-220)
Absolute Maximum Ratings
Parameter
ID@Tc=25Ù C Continuous drain current,VGS@10V
ID@Tc=100CÙ Continuous drain current,VGS@10V
IDM
Pulsed drain current â
PD@TC=25ÙC Power dissipation
Linear derating factor
VGS
Gate-to-Source voltage
dv/dt
Peak diode recovery voltage
EAS
Single pulse avalanche energy â¡
EAR
Repetitive avalanche energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Max.
220
170
880
370
2.0
±20
20
960
TBD
â55 to +175
Units
A
W
W/Ù C
V
v/ns
mJ
ÙC
Thermal Resistance
Parameter
RθJC
Junction-to-case
RθJA
Junction-to-ambient
Min.
Typ.
Max.
â
0.41
â
â
â
62
Units
ÙC/W
Electrical Characteristics @TJ=25Ù C(unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
75 â
â 2.7
2.0 3.1
â 65
ââ
âV
4 mΩ
4.0 V
âS
10 μA
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Page 1 of 6
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=40A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=80V,VGS=0V
Rev.2.0
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