SSF6NS70G_15 Datasheet, PDF (1/9 Pages) GOOD-ARK Electronics – 700V N-Channel MOSFET

Main Product Characteristics
V_DSS
700V
R_DS(on) 1.2Ω (typ.)
I_D
5.2A ①
Features and Benefits
TO-251
SSF6NS70G
 High dv/dt and avalanche capabilities
 100% avalanche tested
 Low input capacitance and gate charge
 Low gate input resistance
 Lead free product
SSF6NS70G/D/F
700V N-Channel MOSFET
TO-252
SSF6NS70D
TO-220F
Schematic Diagram
SSF6NS70F
Description
The SSF6NS70G/D/F series MOSFET is a new technology, which combines an innovative technology
and advance process. This new technology achieves low R_DS(ON), energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
For TO-251/TO-252 package
For TO-220F package
Linear Derating Factor
For TO-251/TO-252 package
For TO-220F package
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.4mH
Avalanche Current @ L=22.4mH
Operating Junction and Storage Temperature Range
Max.
5.2 ①
3.2①
15.6
50
31.2
0.4
0.25
700
± 30
54
2.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
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