SSF6814_15 Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – 68V N-Channel MOSFET

SSF6814
68V N-Channel MOSFET
FEATURES
 Advanced trench process technology
 avalanche energy, 100% test
 Fully characterized avalanche voltage and current
 Lead free product
ID =60A
BV=68V
R _{DS (ON)} =14mΩ（max.）
DESCRIPTION
The SSF6814 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6814 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
 Power switching application
SSF6814 Top View (TO-220)
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100Cْ Continuous drain current,VGS@10V
I_DM
Pulsed drain current ①
Power dissipation
P_D@T_C=25ْC
Linear derating factor
V_GS
Gate-to-Source voltage
E_AS
Single pulse avalanche energy ②
E_AR
Repetitive avalanche energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Max.
60
42
240
108
0.74
±20
154
TBD
–55 to +175
Units
A
W
W/ْ C
V
mJ
ْC
Thermal Resistance
Parameter
R_θJC Junction-to-case
R_θJA Junction-to-ambient
Min.
—
—
Typ.
1.39
—
Max.
—
62
Units
ْC/W
Electrical Characteristics @T_J=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV_DSS Drain-to-Source breakdown voltage 68 — — V
R_DS(on) Static Drain-to-Source on-resistance — 12 14 mΩ
V_GS(th) Gate threshold voltage
2.0
4.0 V
g_fs Forward transconductance
— 60 — S
—— 2
I_DSS Drain-to-Source leakage current
μA
— — 10
Gate-to-Source forward leakage
I_GSS
Gate-to-Source reverse leakage
Q_g Total gate charge
— — 100
nA
— — -100
— 45 — nC
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Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=30A
V_DS=V_GS,I_D=250μA
V_DS=5V,I_D=30A
V_DS=68V,V_GS=0V
V_DS=68V,
V_GS=0V,T_J=150ْC
V_GS=20V
V_GS=-20V
I_D=30A
Rev.2.2