SSF6808A Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

SSF6808A
68V N-Channel MOSFET
FEATURES
 Advanced trench process technology
 Ultra low Rdson, typical 5mohm
 High avalanche energy, 100% test
 Fully characterized avalanche voltage and current
 Lead free product
ID =84A
BV=68V
R _{DS (ON)}=8mohm
DESCRIPTION
The SSF6808A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6808A is
assembled in high reliability and qualified assembly house.
APPLICATIONS
 Power switching application
SSF6808A Top View (TO-263)
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100Cْ Continuous drain current,VGS@10V
I_DM
Pulsed drain current ①
Power dissipation
P_D@T_C=25ْC
Linear derating factor
V_GS
Gate-to-Source voltage
dv/dt Peak diode recovery voltage
E_AS
Single pulse avalanche energy ②
E_AR
Repetitive avalanche energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Max.
84
76
310
180
1.5
±20
31
400
TBD
–55 to +175
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
R_θJC Junction-to-case
R_θJA Junction-to-ambient
Min.
—
—
Typ.
0.83
—
Max.
—
62
Units
ْC/W
Electrical Characteristics @T _J=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BV_DSS
R_DS(on)
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
68 —
—5
V_GS(th)
Gate threshold voltage
2.0
——
I_DSS
Drain-to-Source leakage current
——
Max. Units
—V
8 mΩ
4.0 V
2
μA
10
I_GSS
Gate-to-Source forward leakage
— — 100 nA
Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=30A
V_DS=V_GS,I_D=250μA
V_DS=68V,V_GS=0V
V_DS=68V,
V_GS=0V,T_J=150ْC
V_GS=20V
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