SSF6808 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Power switching application

SSF6808
68V N-Channel MOSFET
FEATURES
 Advanced trench process technology
 Ultra low Rdson, typical 6mohm
 High avalanche energy, 100% test
 Fully characterized avalanche voltage and current
 Lead free product
ID =84A
BV=68V
R _{DS (ON)} =8mohm
DESCRIPTION
The SSF6808 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device
reliability and electrical parameter repeatability. SSF6808 is
assembled in high reliability and qualified assembly house.
APPLICATIONS
 Power switching application
SSF6808 Top View (TO-220)
Absolute Maximum Ratings
Parameter
I_DB B@TB_cB=25ْ C Continuous drain current,VGS@10V
I
B
D
@T B
c^B
B=100Cْ
Continuous drain current,VGS@10V
I _DM B
B
Pulsed drain current ①
Power dissipation
PB
D
@T B
C^B
B=25ْC
Linear derating factor
V _GS B
B
Gate-to-Source voltage
dv/dt Peak diode recovery voltage
E _AS B
B
Single pulse avalanche energy ②
E _AR B
B
T _JB
B
T _STG B
B
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
84
76
310
181
1.5
±20
31
400
TBD
–55 to +175
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
R _θJC B
B
R _θJA B
B
Junction-to-case
Junction-to-ambient
Min.
—
—
Typ.
0.83
—
Max.
—
62
Units
ْC/W
Electrical Characteristics @T_J=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BV _DSS B
B
RB_DS(on)B
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
68 —
—5
VB_GS(th)B
Gate threshold voltage
2.0 —
——
I _DSS B
B
Drain-to-Source leakage current
——
Max. Units
—V
8 mΩ
4.0 V
2
μA
10
Gate-to-Source forward leakage
I _GSS B
B
Gate-to-Source reverse leakage
— — 100
nA
— — -100
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Test Conditions
V _GS B
B
=0V,IB_D
B
=250μA
VB_GSB=10V,IB_DB=30A
VB
D
S^B=V
,I _GS B
B
D^B
B=250μA
V_DB _SB=68V,VB_GSB=0V
V_DB _SB=68V,
VB_GSB=0V,TB_JB=150ْC
V _GS B
B
=20V
VB_GSB=-20V
Rev.2.4