SSF6092G1 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics
V_DSS
60V
R_DS(on) 70mΩ(typ)
I_D
2.7A
SOT-23
SSF6092G1
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
2.7 ①
10.8
1.25
0.01
60
± 20
-55 to + 150
Units
A
W
W/°C
V
V
°C
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