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SSF6072G5 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology | |||
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Main Product Characteristics
SSF6072G5
60V N-Channel MOSFET
VDSS
60V
RDS(on) 67mΩ (typ.)
6072 SSF6072G5
ID
4A
Features and Benefits
SOT-223
Marking and Pin
Assignment
Schematic Diagram
ï® Advanced MOSFET process technology
ï® Special designed for DC-DC and DC-AC converters, load switching and general
purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 175â operating temperature
ï® Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in DC-DC and DC-AC converters and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
4
3
16
3.3
60
± 20
15
10
-55 to +175
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ⤠10s) â£
Junction-to-Ambient (PCB mounted, steady-state) â£
Typ.
â
â
Max.
38
35
Units
A
W
V
V
mJ
A
°C
Units
â/W
â/W
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Rev.1.1
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