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SSF6014A_15 Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – 60V N-Channel MOSFET | |||
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SSF6014A
60V N-Channel MOSFET
FEATURES
ï® Advanced trench process technology
ï® avalanche energy, 100% test
ï® Fully characterized avalanche voltage and current
ï® Lead free product
ID =60A
BV=60V
R DS (ON)=14mΩï¼max.ï¼
DESCRIPTION
The SSF6014A is a new generation of middle voltage and
high current NâChannel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6014A is
assembled in high reliability and qualified assembly house.
APPLICATIONS
ï® Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25Ù C Continuous drain current,VGS@10V
ID@Tc=100CÙ Continuous drain current,VGS@10V
IDM
Pulsed drain current â
Power dissipation
PD@TC=25ÙC
Linear derating factor
VGS
Gate-to-Source voltage
EAS
Single pulse avalanche energy â¡
EAR
Repetitive avalanche energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
SSF6014A Top View (D2PAK)
Max.
60
42
240
115
0.74
±20
235
TBD
â55 to +175
Units
A
W
W/Ù C
V
mJ
ÙC
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
â
â
Typ.
1.31
â
Max.
â
62
Units
ÙC/W
Electrical Characteristics @TJ=25 ÙC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 60 â â V
RDS(on) Static Drain-to-Source on-resistance â 12 14 mΩ
VGS(th) Gate threshold voltage
2.0
4.0 V
gfs Forward transconductance
â 60 â S
ââ 2
IDSS Drain-to-Source leakage current
μA
â â 10
Gate-to-Source forward leakage
IGSS
Gate-to-Source reverse leakage
â â 100
nA
â â -100
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=60V,VGS=0V
VDS=60V,
VGS=0V,TJ=150ÙC
VGS=20V
VGS=-20V
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