SSF6008_15 Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – 60V N-Channel MOSFET

SSF6008
60V N-Channel MOSFET
FEATURES
 Advanced trench process technology
 avalanche energy, 100% test
 Fully characterized avalanche voltage and current
 Lead free product
ID =84A
BV=60V
R _{DS (ON)}=8mΩ
DESCRIPTION
The SSF6008 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6008 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
 Power switching application
SSF6008 Top View (T0-220)
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100Cْ Continuous drain current,VGS@10V
I_DM
Pulsed drain current ①
P_D@T_C=25ْC
Power dissipation
Linear derating factor
V_GS
Gate-to-Source voltage
E_AS
Single pulse avalanche energy ②
E_AR
Repetitive avalanche energy ①
dv/dt
Peak diode recovery voltage
T_J
Operating Junction and
T_STG
Storage Temperature Range
Max.
84
76
310
181
1.5
±20
400
20
30
–55 to +175
Units
A
W
W/ْ C
V
mJ
mJ
v/ns
ْC
Thermal Resistance
Parameter
R_θJC
Junction-to-case
R_θJA
Junction-to-ambient
Min.
Typ.
Max.
—
0.83
—
—
—
62
Units
ْC/W
Electrical Characteristics @T_J=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV_DSS Drain-to-Source breakdown voltage 60 —
—V
R_DS(on) Static Drain-to-Source on-resistance — 5.5
8 mΩ
V_GS(th)
Gate threshold voltage
2.0 — 4.0 V
——
2
I_DSS Drain-to-Source leakage current
——
μA
10
I_GSS Gate-to-Source forward leakage — — 100 nA
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Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=30A
V_DS=V_GS,I_D=250μA
V_DS=60V,V_GS=0V
V_DS=60V,
V_GS=0V,T_J=150ْC
V_GS=20V
Rev.2.2