SSF6007_15 Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – 50V P-Channel MOSFET

Main Product Characteristics
V_DSS
-50V
R_DS(on) 2.1ohm(typ.)
I_D
-130mA
Features and Benefits
SOT-23
 Advanced trench MOSFET process technology
 Special designed for Line current interrupter in
telephone sets, Relay, high speed and line
transformer drivers and general purpose
applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 Lead free product
SSF6007
50V P-Channel MOSFET
6007
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance. These features combine to make this design an extremely efficient and reliable device for use in
line current interrupter in telephone sets and a wide variety of other applications
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
ESD
TJ TSTG
Parameter
Continuous Drain Current, VGS @ -10V①
Continuous Drain Current, VGS @ -10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
ESD Rating (HBM module)
Operating Junction and Storage Temperature Range
Max.
-130
-100
-520
230
-50
± 20
1
-55 to + 150
Thermal Resistance
Symbol
Characteristics
Junction-to-ambient (t ≤ 10s) ④
RθJA
Junction-to-Ambient (PCB mounted, steady-state) ④
www.goodark.com
Page 1 of 5
Typ.
—
—
Max.
556
540
Units
mA
mW
V
V
KV
°C
Units
℃/W
℃/W
Rev.1.0