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SSF6007 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology | |||
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Main Product Characteristics
VDSS
-50V
RDS(on) 2.1ohm(typ.)
ID
-130mA
Features and Benefits
SOT-23
ï® Advanced trench MOSFET process technology
ï® Special designed for Line current interrupter in
telephone sets, Relay, high speed and line
transformer drivers and general purpose
applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 150â operating temperature
ï® Lead free product
SSF6007
50V P-Channel MOSFET
6007
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance. These features combine to make this design an extremely efficient and reliable device for use in
line current interrupter in telephone sets and a wide variety of other applications
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
ESD
TJ TSTG
Parameter
Continuous Drain Current, VGS @ -10Vâ
Continuous Drain Current, VGS @ -10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Drain-Source Voltage
Gate-to-Source Voltage
ESD Rating (HBM module)
Operating Junction and Storage Temperature Range
Max.
-130
-100
-520
230
-50
± 20
1
-55 to + 150
Thermal Resistance
Symbol
Characteristics
Junction-to-ambient (t ⤠10s) â£
RθJA
Junction-to-Ambient (PCB mounted, steady-state) â£
www.goodark.com
Page 1 of 5
Typ.
â
â
Max.
556
540
Units
mA
mW
V
V
KV
°C
Units
â/W
â/W
Rev.1.0
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