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SSF6005_15 Datasheet, PDF (1/7 Pages) GOOD-ARK Electronics – 60V N-Channel MOSFET | |||
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Main Product Characteristics
VDSS
60V
RDS(on) 2.7mohm(typ.)
ID
160A
Features and Benefits
TO-220
ï® Advanced trench MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 175â operating temperature
ï® Lead free product
SSF6005
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.07mHâ¡
Avalanche Current @ L=0.07mHâ¡
Operating Junction and Storage Temperature Range
Max.
160
110
640
230
1.5
60
± 20
350
100
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 7
Rev.1.0
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