SSF5510G_15 Datasheet, PDF (1/4 Pages) GOOD-ARK Electronics – Preliminary

SSF5510G
Preliminary
FEATURES
 Advanced trench process technology
 Ultra low Rdson, typical 8mohm
 High avalanche energy, 100% test
 Fully characterized avalanche voltage and current
 Lead free product
ID =56A
BV=55V
R _{DS (ON)} =8mohm （typ.）
DESCRIPTION
The SSF5510G is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SS5510G is assembled
in high reliability and qualified assembly house.
APPLICATIONS
 Power switching application
SSF5510G Top View
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100Cْ Continuous drain current,VGS@10V
I_DM
Pulsed drain current ①
Power dissipation
P_D@T_C=25ْC
Linear derating factor
V_GS
Gate-to-Source voltage
dv/dt Peak diode recovery voltage
E_AS
Single pulse avalanche energy ②
E_AR
Repetitive avalanche energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Max.
56
40
224
90
0.9
±20
5.0
405
TBD
–55 to +150
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
R_θJC
Junction-to-case
R_θJA
Junction-to-ambient
Min.
—
—
Typ.
—
—
Max.
1.4
62
Units
ْC/W
Electrical Characteristics @T_J=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BV_DSS
R_DS(on)
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
55 —
—8
V_GS(th)
Gate threshold voltage
2.0
——
I_DSS
Drain-to-Source leakage current
——
Max. Units
—V
10 mΩ
4.0 V
2
μA
10
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Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=34A
V_DS=V_GS,I_D=250μA
V_DS=55V,V_GS=0V
V_DS=44V,
V_GS=0V,T_J=150ْC
Rev.1.0