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SSF5508D_15 Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – Preliminary | |||
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Main Product Characteristics
SSF5508D
Preliminary
VDSS
60Vï¼Typï¼
RDS(on)
3.8mohmï¼Typï¼
ID
110A
Features and Benefits
SSF5508D Top View (DPAK)
ï® Advanced trench MOSFET process technology
ï® Special designed for convertors and power controls
ï® Ultra low on-resistance
ï® 150â operating temperature
ï® High Avalanche capability and 100% tested
ï® Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10Vâ
ID @ TC = 100°C Continuous Drain Current, VGS @ 10Vâ
IDM
Pulsed Drain Currentâ¡
ISM
Pulsed Source Current.(Body Diode)
Power Dissipationâ¢
PD @TC = 25°C
Linear derating factor
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
dv/dt
Peak diode recovery voltage
EAS
Single Pulse Avalanche Energy @ L=0.3mHâ¡
IAR
Avalanche Current @ L=0.3mHâ¡
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
110
80
440
400
170
2
55
± 20
35
735
65
-55 to + 150
Units
A
W
W/ CÙ
V
V
v/ns
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-caseâ¢
Junction-to-ambient (t ⤠10s) â£
Value
0.73
50
Unit
â/W
â/W
www.goodark.com
Page 1 of 6
Rev.1.0
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