SSF5508D Datasheet, PDF (1/6 Pages) GOOD-ARK Electronics – Preliminary

Main Product Characteristics
SSF5508D
Preliminary
V_DSS
60V（Typ）
R_DS(on)
3.8mohm（Typ）
I_D
110A
Features and Benefits
SSF5508D Top View (DPAK)
 Advanced trench MOSFET process technology
 Special designed for convertors and power controls
 Ultra low on-resistance
 150℃ operating temperature
 High Avalanche capability and 100% tested
 Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V①
IDM
Pulsed Drain Current②
ISM
Pulsed Source Current.(Body Diode)
Power Dissipation③
PD @TC = 25°C
Linear derating factor
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
dv/dt
Peak diode recovery voltage
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
IAR
Avalanche Current @ L=0.3mH②
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
110
80
440
400
170
2
55
± 20
35
735
65
-55 to + 150
Units
A
W
W/ Cْ
V
V
v/ns
mJ
A
°C
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Value
0.73
50
Unit
℃/W
℃/W
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Rev.1.0