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SSF4N60F_15 Datasheet, PDF (1/7 Pages) GOOD-ARK Electronics – 600V N-Channel MOSFET | |||
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Main Product Characteristics
VDSS
RDS(on)
ID
600V
1.9Ω(typ.)
4A
TO-220F
Features and Benefits
ï® Advanced MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 150â operating temperature
ï® Lead free product
SSF4N60F
600V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=27.5mH
Avalanche Current @ L=27.5mH
Operating Junction and Storage Temperature Range
Max.
4
2.5
16
33
0.26
600
± 30
220
4
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 7
Rev.1.1
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