SSF4953 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

SSF4953
30V Dual P-Channel MOSFET
DESCRIPTION
The SSF4953 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It has
been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V – 25V).
GENERAL FEATURES
●VDS = -30V,ID = -5.3A
RDS(ON) < 85mΩ @ VGS=-4.5V
RDS(ON) < 53mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●Battery protection
●Load switch
●Power management
D1
D2
G1
G2
S1
S2
Schematic Diagram
D1 D1 D2 D2
8 7 65
4953
1 2 34
S1 G1 S2 G2
Marking and Pin Assignment
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4953
SSF4953
SOP-8
Ø330mm
Tape Width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-5.3
-20
2.0
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5
℃ /W
ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
Gate-Body Leakage Current
IG SS
VGS=±25V,VDS=0V
Min Typ Max Unit
-30
V
-1
μA
±100 nA
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