SSF4703DC_15 Datasheet, PDF (1/5 Pages) GOOD-ARK Electronics – 20V P-Channel MOSFET

DESCRIPTION
The SSF4703DC uses advanced trench technology
to provide excellent RDS(ON) and low gate charge . A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
SSF4703DC
20V P-Channel MOSFET
GENERAL FEATURES
● MOSFET
VDS = -20V,ID = -3.4A
RDS(ON) < 160mΩ @ VGS=-1.8V
RDS(ON) < 120mΩ @ VGS=-2.5V
RDS(ON) < 90mΩ @ VGS=-4.5V
●SCHOTTKY
VR = 20V, IF = 1A, VF<0.5V @ 0.5A
● High Power and current handing capability
● Lead free product
● Surface Mount Package
APPLICATIONS
●DC-DC conversion applications
●Load switch
●Power management
Schematic Diagram
Pin Assignment
DFN3X2-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4703DC
SSF4703DC
DFN3X2-8L
－
Tape Width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Parameter
Symbol
MOSFET
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
ID
-3.4
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
-15
Schottky reverse voltage
VR
Continuous Forward Current
IF
Pulsed Forward Current
IFM
Maximum Power Dissipation
PD
1.7
Operating Junction and Storage Temperature Range T_J,T_STG
-55 To 150
Schottky
20
1.9
7
0.96
-55 To 150
Unit
V
V
A
A
V
A
A
W
℃
THERMAL CHARACTERISTICS
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
75
℃ /W
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Page 1 of 5
Rev.2.0